R&D Internship in SiC Power Devices(m/w/x)

# R&D Internship in SiC Power Devices 80 - 100% (f/m/d) **Lenzburg, Aargau, Switzerland** | **Full time** **Location:** Lenzburg, Aargau, Switzerland **Job ID:** R0100713 **Date Posted:** 2025-07-21 **Company Name:** HITACHI ENERGY LTD **Profession (Job Category):** Other **Job Schedule:** Full time **Remote:** No **Job Description:** **The opportunity** Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You’ll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting. **How you’ll make an impact** * Assist in the conceptual design and TCAD simulation of SiC power devices * Work with our experienced engineers to refine device structures and optimize performance * Predict electrical characteristics and validate simulation results * Analyze data, document findings, and present insights in team meetings * Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements **Your background** * Master’s degree in Electrical Engineering, Physics, or Materials Science * Experience with TCAD tools, ideally in SiC device simulation * Understanding of SiC device physics * Basic knowledge of semiconductor fabrication processes * Strong analytical and data interpretation skills * Fluent in English with excellent communication skills