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FR
Fraunhofer-Gesellschaft
8d ago

Internship for electrical and physical characterization of integrated memory devices(m/w/x)

Dresden
Full-timeInternshipOn-site

Description

In this role, you will drive innovation by performing advanced electrical characterizations and data evaluations to optimize the next generation of integrated memory devices.

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Requirements

  • Degree in engineering, science, or comparable
  • Basic knowledge of electrical measurement methods
  • Interest in practical laboratory work
  • Knowledge of solid-state physics or semiconductor technology
  • Motivation to learn solid-state physics
  • High motivation and independent working style
  • Goal-oriented and structured approach
  • High degree of initiative and curiosity
  • Collaborative teamwork skills
  • Strong written and spoken English skills

Education

Currently in higher education

Tasks

  • Perform electrical characterizations on memory devices
  • Conduct reliability analyses on ferroelectric transistors
  • Evaluate measurement data to identify optimizations
  • Define improvements for technical processes
  • Refine advanced characterization methods
  • Explore new materials and technology processes
  • Assist in designing specialized test structures
  • Coordinate specific characterization requirements
  • Prepare professional reports of research results
  • Discuss findings with the development team

Tools & Technologies

Electrical measurement methods

Languages

EnglishBusiness Fluent

Benefits

Diverse Work

  • Exciting tasks
  • Diverse and adaptable tasks

Mentorship & Coaching

  • Valuable insights into methods

Startup Environment

  • Motivated and dynamic team

Modern Equipment

  • Well-equipped research environment

Career Advancement

  • Career entry connecting points

Other Benefits

  • Thesis topic support
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