Description

In this role, you will focus on integrating embedded STT-MRAM technology while collaborating with various teams to enhance product quality and efficiency. Daily tasks will involve characterizing parameters, supporting new product introductions, and solving process challenges.

Requirements

• •M.Sc., Dipl. Ing, or PhD in Electrical Engineering, Materials Science, Physics, or related technical field
• •Basic knowledge of magnetic non-volatile semiconductor memories and CMOS process integration; expertise in solid-state physics and magnetic thin films advantageous
• •Experience in semiconductor technology, process integration, or unit process modules preferred
• •Strong analytical and problem-solving skills
• •Ability to work independently and in diverse, multicultural environments
• •Excellent communication and interpersonal skills
• •Prior exposure to multicultural environments is a plus
• •Fluency in English (written and verbal, at least C1 level); proficiency in German is an advantage

Tasks

• •Develop and optimize process integration of embedded STT-MRAM in the 22nm FDSOI node
• •Characterize inline MTJ stack parameters
• •Implement advanced inline monitoring techniques for process control
• •Sustain and improve manufacturing technologies to enhance product quality
• •Reduce defects and increase efficiency in production
• •Collaborate with Fab1 teams to address MRAM-related performance issues
• •Support new product introduction and production ramp-up
• •Assist in the design and analysis of experiments for MRAM stack development
• •Contribute to improving yield and reliability across technology platforms
• •Work closely with integration teams and customer partners on technical goals
• •Handle process deviations and participate in structured problem-solving using the 8D approach

Benefits