Research Associate - Design and Simulation of GaN Devices(m/w/x)

City: Itzehoe Date: Jul 29, 2025 # Research Associate - Design and Simulation of GaN Devices (all genders) Our »Power Electronics« business area focuses on the development of gallium nitride-based processes and devices. This includes lateral AlGaN/GaN HEMTs, vertical GaN MOSFETs and diodes, as well as GaN-based MEMS, sensors and microelectronic devices, and the development and adaptation of processes for the reliable production of these. **What you will do** * Conceptualization and design of innovative GaN-based devices using commer-cial and open-source EDA software * Conceptualization of control measurements for the in-line characterization of novel devices during production * Simulation and calibration of processes and device properties using TCAD * Supervision of students during the design and simulation of building elements * Independent processing of work packages within forward-looking research projects with various internal and external actors from industry and research * Documentation and communication of the results internally as well as to customers and capitalization of the results trough publications and patents **What you bring to the table** * Completed scientific university degree (Master's/Diploma/Doctorate) in physics, electrical engineering, materials science, or a comparable discipline * Knowledge of semiconductor manufacturing technologies and processes, preferably GaN-specific * Knowledge of device development and process and device simulation (TCAD) * Advantageous: Experience in the (materials science) characterization of semiconductor processes and devices * Proficiency in written and spoken English and German * A high degree of independence, initiative and commitment * The ability to quickly familiarize yourself with new challenges and to thrive while taking on responsibility in a team environment **What you can expect** * Flexible working hours and support in balancing private and professional life * 30 days of vacation per year as well as time off on bridge days and between Christmas and New Year * Occupational health management and company pension scheme (VBL) * Corporate Benefits * Subsidy for the Deutschlandjobticket * Free employee parking * Internal and external training opportunities * Space for independent work and active participation in shaping the future through your own ideas * Direct communication and flat hierarchies for a smooth workflow The weekly working time is 39 hours. This position is also available on a part-time basis. The position is initially limited to 2 years. However, we are interested in long-term cooperation. We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Appointment, remuneration and social security benefits based on the public-sector collective wage agreement (TVöD). With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future. **If you have any technical questions about this position, please contact** Mr. Dr. Simon Fichtner simon.fichtner@isit.fraunhofer.de **If you have any questions about the recruiting process, please contact** Ms Vivien Wilkens vivien.wilkens@isit.fraunhofer.de **Job Segment:** R&D Engineer, Electrical Engineering, R&D, Part Time, Engineering, Research