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Research Associate - Design and Simulation of GaN Devices(m/w/x)
Description
In this role, you will bridge the gap between research and application by designing next-generation GaN devices and managing complex work packages within a cutting-edge production environment.
Let AI find the perfect jobs for you!
Upload your CV and Nejo AI will find matching job offers for you.
Requirements
- •University degree in physics, engineering, or comparable
- •Knowledge of semiconductor manufacturing and GaN-specific processes
- •Knowledge of device development and TCAD simulation
- •Advantageous: Experience in semiconductor characterization
- •Proficiency in written and spoken English and German
- •High degree of independence, initiative, and commitment
- •Quick familiarization with challenges and teamwork skills
Education
Work Experience
approx. 1 - 4 years
Tasks
- •Design innovative GaN-based devices using EDA software
- •Conceptualize control measurements for in-line device characterization
- •Simulate and calibrate processes using TCAD
- •Supervise students during component design and simulation
- •Manage work packages within forward-looking research projects
- •Collaborate with internal and external industry partners
- •Document and communicate results to internal stakeholders
- •Present findings to customers and external partners
- •Publish research results and secure patents
Tools & Technologies
Languages
English – Business Fluent
German – Business Fluent
Benefits
Flexible Working
- •Flexible working hours
Family Support
- •Work-life balance support
More Vacation Days
- •30 days of vacation
- •Time off on bridge days
- •Time off between Christmas and New Year
Other Benefits
- •Occupational health management
Retirement Plans
- •Company pension scheme
Public Transport Subsidies
- •Deutschlandjobticket subsidy
Parking & Commuter Benefits
- •Free employee parking
Learning & Development
- •Internal and external training
Informal Culture
- •Independent work environment
- •Flat hierarchies
- Fraunhofer-GesellschaftFull-timeTemporary contractOn-siteNot specifiedItzehoe
- Fraunhofer-Gesellschaft
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Research Associate - Design and Simulation of GaN Devices(m/w/x)
The AI Job Search Engine
Description
In this role, you will bridge the gap between research and application by designing next-generation GaN devices and managing complex work packages within a cutting-edge production environment.
Let AI find the perfect jobs for you!
Upload your CV and Nejo AI will find matching job offers for you.
Requirements
- •University degree in physics, engineering, or comparable
- •Knowledge of semiconductor manufacturing and GaN-specific processes
- •Knowledge of device development and TCAD simulation
- •Advantageous: Experience in semiconductor characterization
- •Proficiency in written and spoken English and German
- •High degree of independence, initiative, and commitment
- •Quick familiarization with challenges and teamwork skills
Education
Work Experience
approx. 1 - 4 years
Tasks
- •Design innovative GaN-based devices using EDA software
- •Conceptualize control measurements for in-line device characterization
- •Simulate and calibrate processes using TCAD
- •Supervise students during component design and simulation
- •Manage work packages within forward-looking research projects
- •Collaborate with internal and external industry partners
- •Document and communicate results to internal stakeholders
- •Present findings to customers and external partners
- •Publish research results and secure patents
Tools & Technologies
Languages
English – Business Fluent
German – Business Fluent
Benefits
Flexible Working
- •Flexible working hours
Family Support
- •Work-life balance support
More Vacation Days
- •30 days of vacation
- •Time off on bridge days
- •Time off between Christmas and New Year
Other Benefits
- •Occupational health management
Retirement Plans
- •Company pension scheme
Public Transport Subsidies
- •Deutschlandjobticket subsidy
Parking & Commuter Benefits
- •Free employee parking
Learning & Development
- •Internal and external training
Informal Culture
- •Independent work environment
- •Flat hierarchies
About the Company
Fraunhofer Institute for Silicon Technology ISIT
Industry
Research
Description
Fraunhofer ISIT is a research and manufacturing environment focused on power electronics, developing processes and devices based on gallium nitride.
- Fraunhofer-Gesellschaft
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Schülerpraktikant(m/w/x)
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Ausbildung zum Mikrotechnologen - Mikrosystemtechnik(m/w/x)
Full-timeApprenticeshipOn-sitefrom 1,368.26 - 1,464.02 / monthItzehoe