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FRFraunhofer-Gesellschaft

Internship for electrical and physical characterization of integrated memory devices(m/w/x)

Dresden
Full-timeInternshipOn-site

Characterizing integrated memory devices and analyzing ferroelectric transistor reliability at an applied research organization with 76 institutes. Basic knowledge of electrical measurement methods and solid-state physics needed. Work in a well-equipped research environment.

Requirements

  • Degree in engineering, science, or comparable
  • Basic knowledge of electrical measurement methods
  • Interest in practical laboratory work
  • Knowledge of solid-state physics or semiconductor technology
  • Motivation to learn solid-state physics
  • High motivation and independent working style
  • Goal-oriented and structured approach
  • High degree of initiative and curiosity
  • Collaborative teamwork skills
  • Strong written and spoken English skills

Tasks

  • Perform electrical characterizations on memory devices
  • Conduct reliability analyses on ferroelectric transistors
  • Evaluate measurement data to identify optimizations
  • Define improvements for technical processes
  • Refine advanced characterization methods
  • Explore new materials and technology processes
  • Assist in designing specialized test structures
  • Coordinate specific characterization requirements
  • Prepare professional reports of research results
  • Discuss findings with the development team

Education

  • Currently in higher education

Languages

  • EnglishBusiness Fluent

Tools & Technologies

  • Electrical measurement methods

Benefits

Diverse Work

  • Exciting tasks
  • Diverse and adaptable tasks

Mentorship & Coaching

  • Valuable insights into methods

Startup Environment

  • Motivated and dynamic team

Modern Equipment

  • Well-equipped research environment

Career Advancement

  • Career entry connecting points

Other Benefits

  • Thesis topic support
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