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Research Associate - Design and Simulation of GaN Devices(m/w/x)
Designing GaN-based power electronics using EDA software and TCAD simulation at research institute for power electronics. Knowledge of semiconductor manufacturing and GaN-specific processes required. 30 days vacation, time off on bridge days.
Requirements
- University degree in physics, engineering, or comparable
- Knowledge of semiconductor manufacturing and GaN-specific processes
- Knowledge of device development and TCAD simulation
- Advantageous: Experience in semiconductor characterization
- Proficiency in written and spoken English and German
- High degree of independence, initiative, and commitment
- Quick familiarization with challenges and teamwork skills
Tasks
- Design innovative GaN-based devices using EDA software
- Conceptualize control measurements for in-line device characterization
- Simulate and calibrate processes using TCAD
- Supervise students during component design and simulation
- Manage work packages within forward-looking research projects
- Collaborate with internal and external industry partners
- Document and communicate results to internal stakeholders
- Present findings to customers and external partners
- Publish research results and secure patents
Work Experience
- approx. 1 - 4 years
Education
- Master's degree
Languages
- English – Business Fluent
- German – Business Fluent
Tools & Technologies
- TCAD
- GaN
Benefits
Flexible Working
- Flexible working hours
Family Support
- Work-life balance support
More Vacation Days
- 30 days of vacation
- Time off on bridge days
- Time off between Christmas and New Year
Other Benefits
- Occupational health management
Retirement Plans
- Company pension scheme
Public Transport Subsidies
- Deutschlandjobticket subsidy
Parking & Commuter Benefits
- Free employee parking
Learning & Development
- Internal and external training
Informal Culture
- Independent work environment
- Flat hierarchies
Not a perfect match?
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Research Associate - Design and Simulation of GaN Devices(m/w/x)
Designing GaN-based power electronics using EDA software and TCAD simulation at research institute for power electronics. Knowledge of semiconductor manufacturing and GaN-specific processes required. 30 days vacation, time off on bridge days.
Requirements
- University degree in physics, engineering, or comparable
- Knowledge of semiconductor manufacturing and GaN-specific processes
- Knowledge of device development and TCAD simulation
- Advantageous: Experience in semiconductor characterization
- Proficiency in written and spoken English and German
- High degree of independence, initiative, and commitment
- Quick familiarization with challenges and teamwork skills
Tasks
- Design innovative GaN-based devices using EDA software
- Conceptualize control measurements for in-line device characterization
- Simulate and calibrate processes using TCAD
- Supervise students during component design and simulation
- Manage work packages within forward-looking research projects
- Collaborate with internal and external industry partners
- Document and communicate results to internal stakeholders
- Present findings to customers and external partners
- Publish research results and secure patents
Work Experience
- approx. 1 - 4 years
Education
- Master's degree
Languages
- English – Business Fluent
- German – Business Fluent
Tools & Technologies
- TCAD
- GaN
Benefits
Flexible Working
- Flexible working hours
Family Support
- Work-life balance support
More Vacation Days
- 30 days of vacation
- Time off on bridge days
- Time off between Christmas and New Year
Other Benefits
- Occupational health management
Retirement Plans
- Company pension scheme
Public Transport Subsidies
- Deutschlandjobticket subsidy
Parking & Commuter Benefits
- Free employee parking
Learning & Development
- Internal and external training
Informal Culture
- Independent work environment
- Flat hierarchies
About the Company
Fraunhofer Institute for Silicon Technology ISIT
Industry
Research
Description
Fraunhofer ISIT is a research and manufacturing environment focused on power electronics, developing processes and devices based on gallium nitride.
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